M24L416256SA Datasheet, PDF (6/14 Pages) Elite Semiconductor Memory Technology Inc. – 4-Mbit (256K x 16) Pseudo Static RAM

ESMT
M24L416256SA
Switching Characteristics (Over the Operating Range)[10] (continued)
Prameter
t_BW
t_SD
t_HD
t_HZWE
t_LZWE
Description
BLE / BHE LOW to Write End
Data Set-up to Write End
Data Hold from Write End
WE LOW to High Z[11, 13]
WE HIGH to Low Z[11, 13]
–55
Min.
Max.
50
25
0
25
5
–60
Min.
Max.
50
25
0
25
5
–70
Unit
Min.
Max.
55
ns
25
ns
0
ns
25
ns
5
ns
Switching Waveforms
Read Cycle 1 (Address Transition Controlled)[14, 15, 16]
Read Cycle 2 ( OE Controlled)[14, 16]
Notes:
15.Device is continuously selected. OE , CE = V_IL.
16. WE is HIGH for Read Cycle.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2008
Revision: 1.4
6/14