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M12L2561616A2K Datasheet, PDF (4/45 Pages) Elite Semiconductor Memory Technology Inc. – JEDEC standard 3.3V power supply
◁
ESMT
M12L2561616A (2K)
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted，TA = 0 to 70 °C
Parameter
Symbol
Test Condition
Operating Current
ICC1
(One Bank Active)
Precharge Standby
Current in power-down
ICC2P
mode
ICC2PS
Burst Length = 2, tRC = tRC(min), IOL = 0 mA
CKE = VIL(max), tCC = 10ns
CKE & CLK=VIL(max), tCC = ∞
Precharge Standby
Current in non
power-down mode
ICC2N
ICC2NS
Active Standby
ICC3P
Current in power-down
mode
ICC3PS
CKE=VIH(min), CS = VIH(min), tCC = 10ns
Input signals are changed one time during 2CLK
CKE=VIH(min), CLK=VIL(max), tCC = ∞
input signals are stable
CKE=VIL(max), tCC =10ns
CKE & CLK=VIL(max), tCC = ∞
Active Standby
Current in non
power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
ICC3N
ICC3NS
ICC4
ICC5
ICC6
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns
Input signals are changed one time during 2 CLKs
All other pins ≥ VDD-0.2V or ≤ 0.2V
CKE=VIH(min), CLK=VIL(max), tCC = ∞
input signals are stable
IOL = 0 mA, Page Burst, 4 Banks activated,
tCCD = 2 CLKs
tRFC ≥ tRFC(min)
CKE=0.2V
Note: 1. Measured with outputs open.
2. Input signals are changed one time during 2 CLKs.
Version
-5
-6
-7
90
80
70
3
3
15
5
8
8
28
20
110 100 90
150 140 130
5
Unit Note
mA 1,2
mA
mA
mA
mA
mA
mA
mA
mA
mA 1,2
mA
mA
Elite Semiconductor Memory Technology Inc.
Publication Date: Jun. 2012
Revision: 1.4
4/45
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