M12L64164A2M Datasheet, PDF (3/45 Pages) Elite Semiconductor Memory Technology Inc. – 1M x 16 Bit x 4 Banks

ESMT
M12L64164A (2M)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Voltage on any pin relative to VSS
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD supply relative to VSS
VDD, VDDQ
-1.0 ~ 4.6
V
Operating ambient temperature
TA
0 ~ +70
°C
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1
W
Short circuit current
IOS
50
mA
Note:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITION
Recommended operating conditions (Voltage referenced to VSS = 0V, T_A = 0 to 70 °C )
PARAMETER
SYMBOL
MIN
Supply voltage
VDD, VDDQ
3.0
Input logic high voltage
VIH
2.0
Input logic low voltage
VIL
-0.3
Output logic high voltage
VOH
2.4
Output logic low voltage
VOL
-
Input leakage current
IIL
-5
Output leakage current
IOL
-5
TYP
3.3
0
-
-
-
-
MAX
3.6
VDD+0.3
0.8
-
0.4
5
5
Note:
1. V_IH(max) = 4.6V AC for pulse width ≤ 10ns acceptable.
2. V_IL(min) = -1.5V AC for pulse width ≤ 10ns acceptable.
3. Any input 0V ≤ VIN ≤ VDD, all other pins are not under test = 0V.
4. Dout is disabled, 0V ≤ VOUT ≤ VDD.
UNIT
V
V
V
V
V
μA
μA
NOTE
1
2
IOH = -2mA
IOL = 2mA
3
4
CAPACITANCE (V_DD = 3.3V, T_A = 25 °C , f = 1MHz)
PARAMETER
SYMBOL
MIN
Input capacitance (A0 ~ A11, BA0 ~ BA1)
CIN1
0.5
Input capacitance
(CLK, CKE, CS , RAS , CAS , WE &
CIN2
0.5
L(U)DQM)
Data input/output capacitance (DQ0 ~ DQ15)
COUT
2
MAX
4
4
6
UNIT
pF
pF
pF
Elite Semiconductor Memory Technology Inc.
Publication Date: Apr. 2012
Revision: 1.6
3/45