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F59D1G81A Datasheet, PDF (23/43 Pages) Elite Semiconductor Memory Technology Inc. – Voltage Supply: 1.8V (1.7 V ~ 1.95V)
ESMT
Page Program Operation with Random Data Input
F59D1G81A / F59D1G161A
NOTE: tADL is the time from the WE rising edge of final address cycle to the WE rising edge of the first data cycle.
Copy-Back Operation with Random Data Input
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2014
Revision: 1.5
23/43