F59D1G81A Datasheet, PDF (1/43 Pages) Elite Semiconductor Memory Technology Inc. – Voltage Supply: 1.8V (1.7 V ~ 1.95V)

ESMT
Flash
FEATURES
 Voltage Supply: 1.8V (1.7 V ~ 1.95V)
 Organization
x8:
- Memory Cell Array: (128M + 4M) x 8bit
- Data Register: (2K + 64) x 8bit
x16:
- Memory Cell Array: (64M + 2M) x 16bit
- Data Register: (1K + 32) x 16bit
 Automatic Program and Erase
x8:
- Page Program: (2K + 64) Byte
- Block Erase: (128K + 4K) Byte
x16:
- Page Program: (1K + 32) Word
- Block Erase: (64K + 2K) Word
 Page Read Operation
- Page Size: (2K + 64) Byte (x8)
Page Size: (1K + 32) Word (x16)
- Random Read: 25us (Max.)
- Serial Access: 45ns (Min.)
 Memory Cell: 1bit/Memory Cell
 Fast Write Cycle Time
- Program time: 250us (Typ.)
- Block Erase time: 2ms (Typ.)
 Command/Address/Data Multiplexed I/O Port
F59D1G81A / F59D1G161A
1 Gbit (128M x 8/ 64M x 16)
1.8V NAND Flash Memory
 Hardware Data Protection
- Program/Erase Lockout During Power Transitions
 Reliable CMOS Floating Gate Technology
- ECC Requirement: x8 - 1bit/528Byte,
x16 - 1bit/264Word
- Endurance: 100K Program/Erase Cycles
- Data Retention: 10 Years
 Command Register Operation
 Automatic Page 0 Read at Power-Up Option
- Boot from NAND support
- Automatic Memory Download
 NOP: 4 cycles
 Cache Program Operation for High Performance Operation
 Copy-Back Operation
 EDO mode
 OTP Operation
 No Bad-Block-Erasing-Protect function (user should manage
bad blocks before erasing)
ORDERING INFORMATION
Product ID
x8:
F59D1G81A -45TG
F59D1G81A -45BG
x16:
F59D1G161A -45BG
Speed
45 ns
45 ns
45 ns
Package
48 pin TSOPI
63 ball BGA
63 ball BGA
Comments
Pb-free
Pb-free
Pb-free
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2014
Revision: 1.5
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