F25L08PA Datasheet, PDF (23/32 Pages) Elite Semiconductor Memory Technology Inc. – 3V Only 8 Mbit Serial Flash Memory with Dual

ESMT
Table 11: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol
T_PU-READ1
T_PU-WRITE1
V_DD Min to Read Operation
V_DD Min to Write Operation
Parameter
F25L08PA
Minimum
Unit
10
µs
10
µs
Table 12: CAPACITANCE (TA = 25°C, f=1 MHz, other pins open)
Parameter
Description
Test Condition Maximum
C_OUT1
C_IN1
Output Pin Capacitance
Input Capacitance
V_OUT = 0V
V_IN = 0V
12 pF
6 pF
Note 1: This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
Table 13: AC OPERATING CHARACTERISTICS
Symbol
Parameter
Normal 33MHz Fast 50 MHz Fast 100 MHz
Min Max Min Max Min Max
F_CLK
T_SCKH
T_SCKL
T_CES1
T_CEH1
T_CHS1
T_CHH1
T_CPH
T_CHZ
T_CLZ
T_DS
T_DH
T_HLS
T_HHS
T_HLH
T_HHH
T_HZ
T_LZ
T_OH
T_V
Serial Clock Frequency
33
50
100
Serial Clock High Time
13
9
5
Serial Clock Low Time
13
9
5
CE Active Setup Time
5
5
5
CE Active Hold Time
5
5
5
CE Not Active Setup Time
5
5
5
CE Not Active Hold Time
5
5
5
CE High Time
100
100
100
CE High to High-Z Output
9
9
9
SCK Low to Low-Z Output
0
0
0
Data In Setup Time
3
3
3
Data In Hold Time
3
3
3
HOLD Low Setup Time
5
5
5
HOLD High Setup Time
5
5
5
HOLD Low Hold Time
5
5
5
HOLD High Hold Time
5
5
5
HOLD Low to High-Z Output
9
9
9
HOLD High to Low-Z Output
9
9
9
Output Hold from SCK Change
0
0
0
Output Valid from SCK
12
8
7
Note 1: Relative to SCK.
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2009
Revision: 1.7
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