M12L32162A_09 Datasheet, PDF (17/29 Pages) Elite Semiconductor Memory Technology Inc. – 1M x 16Bit x 2Banks Synchronous DRAM

ESMT
Read & Write Cycle at Different Bank @ Burst Length = 4
M12L32162A
*Note: 1.tCDL should be met to complete write.
Elite Semiconductor Memory Technology Inc.
Publication Date : Mar. 2009
Revision : 1.2
17/29