M52S32162A_08 Datasheet, PDF (1/30 Pages) Elite Semiconductor Memory Technology Inc. – 1M x 16Bit x 2Banks Mobile Synchronous DRAM

ESMT
M52S32162A
Mobile SDRAM
1M x 16Bit x 2Banks
Mobile Synchronous DRAM
FEATURES
GENERAL DESCRIPTION
z 2.5V power supply
z LVCMOS compatible with multiplexed address
z Dual banks operation
z MRS cycle with address key programs
- CAS Latency (1, 2 & 3 )
- Burst Length (1, 2, 4, 8 & full page)
- Burst Type (Sequential & Interleave)
z EMRS cycle with address key programs.
z All inputs are sampled at the positive going edge of the
system clock
z Burst Read Single-bit Write operation
z Special Function Support.
- PASR (Partial Array Self Refresh )
- TCSR (Temperature compensated Self Refresh)
- DS (Driver Strength)
z DQM for masking
z Auto & self refresh
z 64ms refresh period (4K cycle)
PIN CONFIGURATION (TOP VIEW)
TOP View
The M52S32162A is 33,554,432 bits synchronous high data
rate Dynamic RAM organized as 2 x 1,048,576 words by 16
bits, fabricated with high performance CMOS technology.
Synchronous design allows precise cycle control with the use
of system clock I/O transactions are possible on every clock
cycle. Range of operating frequencies, programmable burst
length and programmable latencies allow the same device to
be useful for a variety of high bandwidth, high performance
memory system applications.
ORDERING INFORMATION
Product ID
Max
Freq.
Package
Comments
M52S32162A -6TG 166MHz 54 Pin TSOP(II) Pb-free
M52S32162A -7.5TG 133MHz 54 Pin TSOP(II) Pb-free
M52S32162A -10TG 100MHz 54 Pin TSOP(II) Pb-free
M52S32162A -6BG 166MHz 54 Ball VFBGA Pb-free
M52S32162A -7.5BG 133MHz 54 Ball VFBGA Pb-free
M52S32162A -10BG 100MHz 54 Ball VFBGA Pb-free
54 Ball FVBGA(8mmx8mm)
VDD 1
DQ0 2
VDDQ 3
DQ1 4
DQ2 5
VSSQ 6
DQ3 7
DQ4 8
VDDQ 9
DQ5 10
DQ6 11
VSSQ 12
DQ7 13
VDD 14
LDQM 15
WE 16
CAS 17
RAS 18
CS 19
NC 20
BA 21
A10/AP 22
A0 23
A1 24
A2 25
A3 26
VDD 27
54 VSS
53 DQ15
52 VSSQ
51 DQ14
50 DQ13
49 VDDQ
48 DQ12
47 DQ11
46 VSSQ
45 DQ10
44 DQ9
43 VDDQ
42 DQ8
41 VSS
40 NC
39 UDQM
38 CLK
37 CKE
36 NC
35 A11
34 A9
33 A8
32 A7
31 A6
30 A5
29 A4
28 VSS
1
2
3
4
5
6
7
8
9
A
VSS D Q1 5 VSSQ
V DDQ DQ0 VDD
B
DQ14 D Q1 3 VDDQ
VSSQ DQ2 DQ1
C
DQ12 DQ11 VSSQ
VDDQ DQ4 DQ3
D
DQ10 DQ9 VDDQ
VSSQ DQ6 DQ5
E
DQ8 NC
V SS
F
UDQM CLK _CKE
G
NC A11 A9
H
A8
A7
A6
J
V SS
A5
A4
VDD LDQM DQ7
CAS RAS W E
BA
NC
CS
A0
A1
A1 0
A9
A2
VDD
Elite Semiconductor Memory Technology Inc.
Publication Date : Dec. 2008
Revision : 1.4
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