PTB20151 Datasheet, PDF (5/5 Pages) Ericsson – 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor

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PTB 20151
* Thermally linked to RF device.
Schematic for f = 2 GHz
Q1
PTB 20151
NPN RF Transistor
l1, l9
Microstrip 50 Ω
l2
.1 λ 2 GHz
Microstrip 75 Ω
l3
.065 λ 2 GHz
Microstrip 16 Ω
l4
.095 λ 2 GHz
Microstrip 12.5 Ω
l5
.055 λ 2 GHz
Microstrip 9.7 Ω
l6
.055 λ 2 GHz
Microstrip 12.5 Ω
l7
.065 λ 2 GHz
Microstrip 22 Ω
C1, C6
0.1 µF
1206 Chip
C2, C7
10 µF, 35 V SMT Tantalum
C3, C4, C8, C10 20 pF
ATC-100
C5, C9
0–4 pf
Johanson Trimmer
L1
L2, L4
L3
R1
Board
56 nh
SMT Inductor
3 Turn #22, 0.25” O.D.
4 mm.
SMT Ferrite
22 Ω
1206 SMT Resistor
0.031 G-200 Solid Copper Bottom, AlliedSignal
Bias Parts (not shown on layout)
Q2
BCP 56
D1
BAV 99
C10, C11
0.1 pF
R2
2K
R3, R4
10 Ω
SMT NPN Transistor
Diode
SMT Capacitor
Potentiometer
1206 SMT Resistor
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: [phone]
1-877-GOLDMOS
(1-877-465-3667)
e-mail: [e-mail]
www.ericsson.com/rfpower
5
Specifications subject to change without notice.
L3
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20151 Uen Rev. C 09-28-98