PTB20151 Datasheet, PDF (1/5 Pages) Ericsson – 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor

e
PTB 20151
45 Watts, 1.8–2.0 GHz
PCN/PCS Power Transistor
Description
The 20151 is a class AB, NPN common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts
minimum output power for PEP applications, it is specifically intended
for operation as a final or driver stage in CDMA or TDMA systems.
Ion implantation, nitride surface passivation and gold metallization
ensure excellent device reliability. 100% lot traceability is standard.
• 45 Watts, 1.8–2.0 GHz
• Class AB Characteristics
• 40% Collector Efficiency at 45 W
• Gold Metallization
• Silicon Nitride Passivated
Typical Output Power vs. Input Power
70
60
50
40
30
V_CC = 26 V
20
I_CQ = 100 mA
10
f = 2.0 GHz
0
0 1 23 4 5 67 8 9
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25° C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70° C)
1
9/28/98
20151 _{LOT CODE}
Package 20223
Symbol
V_CER
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
50
50
4.0
7.7
200
1.2
–40 to +150
0.85
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W