PTB20111 Datasheet, PDF (3/3 Pages) Ericsson – 85 Watts, 860-900 MHz Cellular Radio RF Power Transistor

e
Typical Performance
Gain vs. Frequency
11 ^{(as measured in a broadband circuit)}
10
9
8
7
860
V_CC = 25 V
I_CQ = 200 mA
Pout = 85 W
870
880
890
900
Frequency (MHz)
Efficiency vs. Output Power
60
50
40
30
20
V_CC = 25 V
I_CQ = 200 mA
10
f = 900 MHz
0
45 50 55 60 65 70 75 80 85 90
Output Power (Watts)
PTB 20111
Intermodulation Distortion vs. Power Output
-20
-24
-28
-32
-36
-40
20
V_CC = 25 V
I_CQ = 200 mA
f₁ = 899.95 MHz
f₂ = 900.00 MHz
30 40 50 60 70 80 90
Output Power (Watts-PEP)
Output Power vs. Supply Voltage
100
90
80
70
60
50
18
I_CQ = 200 mA
Pin = 10 W
f = 900 MHz
20
22
24
26
28
Vcc, Supply Voltage
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: [phone]
1-877-GOLDMOS
(1-877-465-3667)
e-mail: [e-mail]
www.ericsson.com/rfpower
3
Specifications subject to change without notice.
LF
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20111 Uen Rev. D 09-28-98