PTB20111 Datasheet, PDF (1/3 Pages) Ericsson – 85 Watts, 860-900 MHz Cellular Radio RF Power Transistor

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PTB 20111
85 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
Description
The 20111 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 860 to 900 MHz. Rated at 85
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Typical Output Power vs. Input Power
100
80
60
40
V_CC = 25 V
20
I_CQ = 200 mA
f = 900 MHz
0
0
4
8
12
16
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
• 25 Volt, 860–900 MHz Characteristics
- Output Power = 85 Watts
- Collector Efficiency = 50% at 85 Watts
- IMD = -30 dBc Max at 60 W(PEP)
• Class AB Characteristics
• Gold Metallization
• Silicon Nitride Passivated
20111 _{LOT CODE}
Package 20216
Symbol
V_CER
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
40
65
4.0
20
159
0.91
–40 to +150
1.1
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
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