PTF10195 Datasheet, PDF (2/6 Pages) Ericsson – 125 Watts, 869-894 MHz GOLDMOS Field Effect Transistor

PTF 10195
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 25 mA
Drain-Source Leakage Current V_DS = 26 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 100 mA
Forward Transconductance
V_DS = 10 V, I_D = 3 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
TyepsticCailrcPueirtformance
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
20
200
Output Power (W)
18
160
V_DD = 28 V
16
120
Gain (dB)
I_DQ = 1.3 A
14
80
12
Efficiency (%) 40
10
0
869 874 879 884 889 894
Frequency (MHz)
e
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ
—
—
—
3.0
Max
—
1.0
5.0
—
Units
Volts
mA
Volts
Siemens
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
266
1.52
–40 to +150
.66
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Broadband Test Fixture Performance
20
65
Efficiency
18
55
16
45
14 Gain
12
10
8
6
4
2
869
874
35
V_DD = 28 V
25
I_DQ = 1.3 A
15
P_OUT = 125 W
0
5
-10
-5
-20
-15
Return Loss (dB) _-30
-25
879
884
889
894
Frequency (MHz)
2