PTF10195 Datasheet, PDF (1/6 Pages) Ericsson – 125 Watts, 869-894 MHz GOLDMOS Field Effect Transistor

PTF 10195
125 Watts, 869–894 MHz
GOLDMOS ^® Field Effect Transistor
Description
The 10195 is an internally matched 125–watt GOLDMOS FET intended
for cellular, GSM, D-AMPS, CDMA and EDGE applications. This device
operates at 53% efficiency with 13 dB of gain minimum. Full gold
metallization ensures excellent device lifetime and reliability.
• INTERNALLY MATCHED
• Performance at 894 MHz, 28 Volts
- Output Power = 125 Watts
- Power Gain = 14 dB Typical
- Efficiency = 53% Typical
• Full Gold Metallization
• Excellent Thermal Stability
• 100% Lot Traceability
Typical Power Output and Efficiency
vs. Input Power
160
64
140
56
120
Efficiency 48
100
40
80
V_DD = 28 V ³²
60
24
I_DQ = 1.3 A
40
f = 894 MHz ¹⁶
20
Power Output
8
0
0
0
1
2
3
4
5
6
Input Power (Watts)
10195 _12345600-A
Package 20248
RF Specifications (100% Tested)
Characteristic
Gain
(V_DD = 28 V, P_OUT = 125 W, I_DQ = 1300 mA, f = 894 MHz)
Power Output at 1 dB Compression
(V_DD = 28 V, I_DQ = 1300 mA, f = 894 MHz)
Drain Efficiency
(V_DD = 28 V, P_OUT = 125 W, I_DQ = 1300 mA, f = 894 MHz)
Load Mismatch Tolerance
(V_DD = 28 V, P_OUT = 125 W, I_DQ = 1300 mA, f = 894 MHz
—all phase angles at frequency of test)
All published data at T_CASE = 25°C unless otherwise indicated.
Symbol Min
G_pe
P-1dB
h
Y
13
125
45
10:1
Typ
14
140
53
—
Max Units
—
dB
—
Watts
—
%
—
—
e
1