PTF10162 Datasheet, PDF (2/8 Pages) Ericsson – 18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

PTF 10162
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 25 mA
Drain-Source Leakage Current V_DS = 28 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 75 mA
Forward Transconductance
V_DS = 10 V, I_D = 0.5 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature
Thermal Resistance (T_CASE = 70°C)
Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
21
70
Output Power
20
65
19
18
17
Gain
16
60
V_DD = 26 V
55
Efficiency
50
I_DQ = 130 mA
45
40
15
860
880
900
920
940
Frequency (MHz)
35
960
e
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ Max Units
—
—
Volts
—
1.0
mA
—
5.0
Volts
0.9
—
Siemens
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
58
0.33
150
3.0
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Broadband Test Fixture Performance
20
60
Efficiency (%) 50
16
Gain (dB)
12
40
V_DD = 26 V
I_DQ = 130 mA
30
0
P_OUT = 18 W
- 250
8
-10
-1150
Return Loss (dB)
-20
4
-205
920
930
940
950
960
Frequency (MHz)
2