PTF10162 Datasheet, PDF (1/8 Pages) Ericsson – 18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

PTF 10162
18 Watts, 860–960 MHz
GOLDMOS^™ Field Effect Transistor
Description
The PTF 10162 is an 18 Watt LDMOS FET intended for large signal
amplifier applications from 860 to 960 MHz. It operates at 55% efficiency
with 15 dB of gain. Nitride surface passivation and full gold metallization
ensure excellent device lifetime and reliability.
• Performance at 960 MHz, 26 Volts
- Output Power = 18 Watts
- Power Gain = 15 dB Typ
- Efficiency = 55% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Excellent Thermal Stability
• Back Side Common Source
• 100% Lot Traceability
Typical Output Power & Efficiency vs. Input Power
24
80
20
16
12
8
4
0
0.0
Output Power
70
Efficiency ⁶⁰
50
V_DD = 26 V
40
I_DQ = 130 mA
f = 960 MHz
30
0.3
0.5
0.8
Input Power (Watts)
20
1.0
10162 _A-1234569855
Package 20222
RF Specifications (100% Tested)
Characteristic
Common Source Power Gain
(V_DD = 26 V, P_OUT = 18 W, I_DQ = 130 mA, f = 960 MHz)
Power Output at 1 dB Compression
(V_DD = 26 V, I_DQ = 130 mA, f = 960 MHz)
Drain Efficiency
(V_DD = 26 V, P_OUT = 18 W, I_DQ = 130 mA, f = 960 MHz)
Load Mismatch Tolerance
(V_DD = 26 V, P_OUT = 18 W, I_DQ = 130 mA, f = 960 MHz—
all phase angles at frequency of test)
All published data at T_CASE = 25°C unless otherwise indicated.
Symbol Min
G_ps
14
P-1dB
18
h
50
Y
—
Typ
15
20
55
—
Max Units
—
dB
—
Watts
—
%
5:1
—
e
1