PTF10161 Datasheet, PDF (2/7 Pages) Ericsson – 165 Watts, 869-894 MHz GOLDMOS Field Effect Transistor

PTF 10161
Electrical Characteristics (per side) (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 5 mA
Drain-Source Leakage Current V_DS = 28 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 75 mA
Forward Transconductance
V_DS = 10 V, I_D = 3 A
Maximum Ratings
Parameter
Drain-Source Voltage ⁽¹⁾
Gate-Source Voltage ⁽¹⁾
Operating Junction Temperature
Total Device Dissipation at
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
(1) _{per side}
Typical Performance
Typical POUT (at P-1dB), Gain & Efficiency
vs. Frequency
18
225
Output Power (W)
16
175
Gain (dB)
14
12 _{Efficiency (%)}
125
V_DD = 28 V
I_DQ = 1.5 A Total ₇₅
10
25
865 870 875 880 885 890 895
Frequency (MHz)
e
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ Max Units
—
—
Volts
—
1.0
mA
4.3
5.0
Volts
2.5
—
Siemens
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
500
2.85
–40 to +150
0.35
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Broadband Test Fixture Performance
16
60
Gain
50
14
Efficiency (%)
40
12
10
8
865
V_DD = 28 V
30
I_DQ = 1.5 A Total
P_OUT = 165 W
Return _-205
Loss (dB) _-10
-1105
-20
-025
870 875 880 885 890 895
Frequency (MHz)
2