PTF10161 Datasheet, PDF (1/7 Pages) Ericsson – 165 Watts, 869-894 MHz GOLDMOS Field Effect Transistor

PTF 10161
165 Watts, 869–894 MHz
GOLDMOS^® Field Effect Transistor
Description
The PTF 10161 is an internally matched,165 watt GOLDMOS FET
intended for large signal amplifier applications from 869 to 894 MHz.
It typically operates with 50% efficiency and 16 db of gain. Nitride
surface passivation and full gold metallization ensure excellent device
lifetime and reliability.
• INTERNALLY MATCHED
• Performance at 894 MHz, 28 Volts
- Output Power = 165 Watts
- Power Gain = 16.0 dB Typ
- Drain Efficiency = 50% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• 100% Lot Traceability
Typical Output Power & Efficiency vs. Input Power
180
60
Efficiency
140
45
100
60
20
0
30
V_DD = 28.0 V
I_DQ = 1.5 A Total ₁₅
f = 880 MHz
Output Power
0
1 23 456 78
Input Power (Watts)
10161 _1234560055
Package 20250
RF Specifications (100% Tested)
Characteristic
Gain
(V_DD = 28 V, P_OUT = 165 W, I_DQ = 1.5 A Total, f = 894 MHz)
Power Output at 1 dB Compression
(V_DD = 28 V, I_CQ = 1.5 A Total, f = 880 MHz)
Drain Efficiency
(V_DD = 28 V, P_OUT = 165 W, I_DQ = 1.5 A Total, f = 894 MHz)
Load Mismatch Tolerance
(V_DD = 28 V, P_OUT = 165 W, I_DQ = 1.5 A Total,
f = 893.9, 894 MHz—all phase angles at frequency of test)
All published data at T_CASE = 25°C unless otherwise indicated.
Symbol Min
G_ps
P-1dB
h
Y
15.0
165
45
—
1
Typ Max Units
16.0
—
dB
180
—
Watts
50
—
%
—
10:1
—
e