PTF10154 Datasheet, PDF (2/5 Pages) Ericsson – 85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor

PTF 10154
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 100 mA
Zero Gate Voltage Drain Current V_DS = 28 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 150 mA
Forward Transconductance
V_DS = 10 V, I_D = 2 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation at
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
Typical Performance
Narrowband Test Fixture Performance
12
60
Gain
9
50
Ef f iciency
40
6
3
0
1900
V_DD = 28 V, I_DQ = 1.15 A
30
P_OUT = 85 W
-20
5
-10
Return Loss ¹⁰
-0
1920 1940 1960 1980 2000
Frequency (MHz)
e
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ Max Units
—
—
Volts
—
5.0
mA
—
5.0
Volts
1.0
—
Siemens
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
365
2.08
–40 to +150
0.48
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Power Gain vs. Output Power
12
11
10
9
8
1
I_DQ = 1.2
I_DQ = 0.6
I_DQ = 0.3
V_DD = 28 V
f = 1990 MHz
10
100
Output Power (Watts)
2