PTF10154 Datasheet, PDF (1/5 Pages) Ericsson – 85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor

PTF 10154
85 Watts, 1.93–1.99 GHz
GOLDMOS ^® Field Effect Transistor
Description
The PTF 10154 is an internally matched 85–watt GOLDMOS FET
intended for CDMA and TDMA applications from 1.93 to 1.99 GHz.
This device operates at 43% efficiency with 11 dB gain. Nitride surface
passivation and full gold metallization ensure excellent device life-
time and reliability.
Typical Power Output and Efficiency
vs. Input Power
100
50
80
60
40
20
0
0
40
Ef f ic ienc y
30
Power Output
V_DD = 28 V
I_DQ = 1.15 A
f = 1990 MHz
3
6
9
12
Input Power (Watts)
20
10
0
15
• INTERNALLY MATCHED
• Guaranteed Performance at 1.93, 1.99 GHz,
28 V
- Output Power = 85 Watts Min
- Power Gain = 11 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% Lot Traceability
A-1¹₂₃⁰₄₅1_6050345
Package 20248
RF Specifications (100% Tested)
Characteristic
Gain
(V_DD = 28 V, P_OUT = 10 W, I_DQ = 1.15 A, f = 1.96, 1.99 GHz)
Power Output at 1 dB Compression
(V_DD = 28 V, I_DQ = 1.15 A, f = 1.99 GHz)
Drain Efficiency
(V_DD = 28 V, P_OUT = 90 W, I_DQ = 1.15 A, f = 1.99 GHz)
Load Mismatch Tolerance
(V_DD = 28 V, P_OUT = 90 W, I_DQ = 1.15 A, f = 1.99 GHz
—all phase angles at frequency of test)
All published data at T_CASE = 25°C unless otherwise indicated.
Symbol
G_ps
P-1dB
h_D
Y
Min
10.0
85
—
—
Typ
11
—
43
—
Max Units
—
dB
—
Watts
—
%
10:1
—
e
1