PTF10153 Datasheet, PDF (2/5 Pages) Ericsson – 60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor

PTF 10153
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 25 mA
Zero Gate Voltage Drain Current V_DS = 28 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 75 mA
Forward Transconductance
V_DS = 10 V, I_D = 0.5 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation at
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
Typical Performance
Typical P_OUT, Gain & Efficiency (at P-1dB)
vs. Frequency
12
90
11
Gain (dB)
76
10
9
8
7
1750
62
Output Pow er (W)
48
V_DD = 28 V
I_DQ = 650 mA
Efficiency (%) 34
20
1800 1850 1900 1950 2000
Frequency (MHz)
e
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
1.0
Typ Max Units
—
—
Volts
—
1
mA
—
5.0
Volts
—
—
Siemens
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
237
1.35
–40 to +150
0.74
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Broadband Test Fixture Performance
20
60
Efficiency (%)
50
16
Gain
40
12
V_DD = 28V
- ₃₅₀
I_DQ = 650 mA
-120
8
P_OUT = 60 W
-150
4
1800
1820
Return Loss (dB) _-205
1840
1860
1880
Frequency (MHz)
2