PTF10153 Datasheet, PDF (1/5 Pages) Ericsson – 60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor

PTF 10153
60 Watts, 1.8–2.0 GHz
GOLDMOS ^® Field Effect Transistor
Description
The PTF 10153 is an internally matched 60–watt GOLDMOS FET
intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It
operates with 40% efficiency and 11.5 dB minimum gain. Nitride
surface passivation and full gold metallization ensure excellent de-
vice lifetime and reliability.
Typical Output Power & Efficiency
vs. Input Power
90
60
80
50
70
60
40
50
30
40
30
V_DD = 28 V
20
20
I_DQ = 650mA
10
f = 1880 MHz ¹⁰
0
0
0
2
4
6
8 10 12
Input Power (Watts)
• INTERNALLY MATCHED
• Guaranteed Performance at 1805, 1843, 1880
MHz, 28 V
- Output Power = 60 Watts Min
- Power Gain = 11.5 dB Min
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% Lot Traceability
A-1¹₂₃⁰₄₅1_6959353
Package 20248
RF Specifications (100% Tested)
Characteristic
Gain
(V_DD = 28 V, P_OUT = 60 W, I_DQ = 650 mA,
f = 1805, 1843, 1880 MHz)
Power Output at 1 dB Compression
(V_DD = 28 V, I_DQ = 650 mA, f = 1880 MHz)
Drain Efficiency
(V_DD = 28 V, P_OUT = 60 W, I_DQ = 650 mA,
f = 1805, 1843, 1880 MHz)
Return Loss
(V_DD = 28 V, P_OUT = 60 W, I_DQ = 650 mA,
f = 1805, 1843, 1880 MHz)
Load Mismatch Tolerance
(V_DD = 28 V, P_OUT = 60 W, I_DQ = 650 mA, f = 1805
—all phase angles at frequency of test)
All published data at T_CASE = 25°C unless otherwise indicated.
Symbol Min
G_ps
11.5
P-1dB
60
h_D
40
—
—
Y
—
1
Typ Max Units
—
—
dB
—
—
Watts
—
—
%
—
–9.5
dB
—
10:1
—
e