PTF10149 Datasheet, PDF (2/6 Pages) Ericsson – 70 Watts, 921-960 MHz GOLDMOS Field Effect Transistor

PTF 10149
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 25 mA
Drain-Source Leakage Current V_DS = 26 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 75 mA
Forward Transconductance
V_DS = 10 V, I_D = 3 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
Typical Performance
Typical P_OUT, Gain & Efficiency (at P-1dB)
vs. Frequency
17
120
Gain (dB)
15
100
13
V_DD = 26 V
80
Output Pow er (W)
11
I_DQ = 750 mA
60
9
920
Efficiency (%)
40
930
940
950
960
Frequency (MHz)
e
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ Max Units
—
—
Volts
—
1.0
mA
—
5.0
Volts
3.0
—
Siemens
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
197
1.12
–40 to +150
0.89
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Broadband Test Fixture Performance
20
60
16
Gain
12
8
Efficiency (%)
50
V_DD = 26 V
40
I_DQ = 750 mA
- 350
P_OUT = 70 W
-1250
Return Loss ^-2150
4
920
930
940
950
Frequency (MHz)
-305
960
2