PTF10149 Datasheet, PDF (1/6 Pages) Ericsson – 70 Watts, 921-960 MHz GOLDMOS Field Effect Transistor

PTF 10149
70 Watts, 921–960 MHz
GOLDMOS Field Effect Transistor
Description
The PTF 10149 is an internally matched 70–watt GOLDMOS FET
intended for cellular and GSM amplifier applications from 921 to
960 MHz. It operates with 50% efficiency and 16 dB typical gain.
Nitride surface passivation and full gold metallization ensure excel-
lent device lifetime and reliability.
Typical Output Power & Efficiency vs. Input Power
100
60
Ef f ic ienc y
80
50
60
40
20
0
0
Output Pow er
V_DD = 26 V
I_DQ = 750 mA
f = 960 MHz
1
2
Input Power (Watts)
40
30
20
10
3
• INTERNALLY MATCHED
• Performance at 960 MHz, 26 Volts
- Output Power = 70 Watts
- Power Gain = 16.0 dB Typ
- Efficiency = 50% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Excellent Thermal Stability
• 100% Lot Traceability
e
A-12¹₃⁰₄₅1_6949935
Package 20252
RF Specifications (100% tested)
Characteristic
Gain
(V_DD = 26 V, P_OUT = 70 W, I_DQ = 750 mA, f = 960 MHz)
Power Output at 1 dB Compression
(V_DD = 26 V, I_DQ = 750 mA, f = 960 MHz)
Drain Efficiency
(V_DD = 26 V, P_OUT = 70 W, I_DQ = 750 mA, f = 960 MHz)
Load Mismatch Tolerance
(V_DD = 26 V, P_OUT = 70 W, I_DQ = 750 mA, f = 921 MHz
—all phase angles at frequency of test)
All published data at T_CASE = 25°C unless otherwise indicated.
Symbol Min
G_pe
P-1dB
h
Y
15.0
70
47
—
Typ
16.0
75
50
—
Max Units
—
dB
—
Watts
—
%
5:1
—
e
1