PTF10139 Datasheet, PDF (2/6 Pages) Ericsson – 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

PTF 10139
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 25 mA
Drain-Source Leakage Current V_DS = 28 V, V_GS = 0 V
Gate-Source Leakage Current V_GS = 20 V, V_DS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 75 mA
Forward Transconductance
V_DS = 10 V, I_D = 3 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
14
90
Gain (dB)
13
80
V_DD = 28 V
12 _{IDQ = 500 mA}
70
Output Power (W)
11
60
10
Efficiency (%) ⁵⁰
9
40
840 860 880 900 920 940 960
Frequency (MHz)
e
Symbol
V_(BR)DSS
I_DSS
I_GSS
V_GS(th)
g_fs
Min
65
—
—
3.0
—
Typ
—
—
—
—
2.8
Max
—
1.0
1
5.0
—
Units
Volts
mA
mA
Volts
Siemens
Symbol
V_DS
V_GS
I_D
T_J
P_D
T_STG
R_qJC
Value
65
±20
7
200
194
1.11
-65 to 150
0.9
Unit
Vdc
Vdc
Adc
°C
Watts
W/°C
°C
°C/W
Broadband Test Fixture Performance
14
60
Efficiency (%)
13
50
12
40
11 _{Gain (dB)}
10
V_DD = 28 V
I_DQ = 500 mA
P_OUT = 60 W
9
8
920
Return Loss (dB)
930
940
950
Frequency (MHz)
30
-5
20
-15
10
-25
0
960
2