PTF10139 Datasheet, PDF (1/6 Pages) Ericsson – 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

PTF 10139
60 Watts, 860-960 MHz
GOLDMOS ^® Field Effect Transistor
Description
The PTF 10139 is a GOLDMOS FET intended for amplifier applica-
tions to 860-960 MHz. This 60–watt device operates at 55% effi-
ciency with 12.5 dB typical gain. Nitride surface passivation and full
gold metallization ensure excellent device lifetime and reliability.
Typical Output Power & Efficiency vs. Input Power
70
80
Output Power
60
70
50
60
40
30
20
10
0
0
50
Efficiency
40
V_DD = 28 V
30
I_DQ = 500 mA
f = 960 MHz
20
10
1
2
3
4
Input Power (Watts)
• Performance at 960 MHz, 28 Volts
- Output Power = 60 Watts Min
- Power Gain = 12.5 dB Typ
- Efficiency = 55% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Excellent Thermal Stability
• Back Side Common Source
• 100% Lot Traceability
• Available in Package 20256 as PTF 10138
e
10139 _A-1234561199
Package
20251
Also available in
Package
20256
e
A-12¹₃⁰₄₅1₆₂3₇₈₀₀
RF Specifications (100% Tested)
Characteristic
Common Source Power Gain
(V_DD = 28 V, P_OUT = 60 W, I_DQ = 500 mA, f = 960 MHz)
Power Output at 1 dB Compression
(V_DD = 28 V, I_DQ = 500 mA, f = 960 MHz)
Drain Efficiency
(V_DD = 28 V, P_OUT = 60 W, I_DQ = 500 mA, f = 960 MHz)
Load Mismatch Tolerance
(V_DD = 28 V, P_OUT = 60 W, I_DQ = 500 mA, f = 960 MHz—
all phase angles at frequency of test)
All published data at T_CASE = 25°C unless otherwise indicated.
Symbol Min
G_ps
11.5
P-1dB
60
h
50
Y
—
Typ
12.5
—
55
—
Max Units
—
dB
—
Watts
—
%
10:1
—
e
1