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PTF10137 Datasheet, PDF (2/6 Pages) Ericsson – 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
PTF 10137
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA
Drain-Source Leakage Current VDS = 28 V, VGS = 0 V
Gate Threshold Voltage
VDS = 10 V, ID = 75 mA
Forward Transconductance
VDS = 10 V, ID = 0.5 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C)
Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
18
80
17 Gain (dB)
70
16
15
14
VDD = 28 V
13
IDQ = 160 mA
12
60
Efficiency (%) 50
40
30
Output Power (W)
20
11
10
840
880
920
960
1000
Frequency (MHz)
e
Symbol
V(BR)DSS
IDSS
VGS(th)
gfs
Min
65
—
3.0
—
Typ Max Units
—
—
Volts
—
1
mA
—
5.0
Volts
0.9
—
Siemens
Symbol
VDSS
VGS
TJ
PD
TSTG
RqJC
Value
65
±20
200
58
0.33
–40 to 150
3.0
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Broadband Test Fixture Performance
20
80
Gain (dB)
16
70
12
8
4
960
Efficiency (%)
VDD = 28 V
60
IDQ = 160 mA
-10
POUT = 12 W
50
-20
Return Loss (dB)
40
970
980
990
Frequency (MHz)
1000
2