PTF10137 Datasheet, PDF (1/6 Pages) Ericsson – 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

PTF 10137
12 Watts, 1.0 GHz
GOLDMOS^™ Field Effect Transistor
Description
The PTF 10137 is a 12 Watt LDMOS FET intended for large signal
amplifier applications to 1.0 GHz. It operates at 60% efficiency with
18 dB of gain. Nitride surface passivation and full gold metallization
ensure excellent device lifetime and reliability.
Typical Output Power & Efficiency vs. Input Power
20
80
Efficiency (%)
15
60
V_DD = 28 V
10
I_DQ = 160 mA
40
f = 960 MHz
5
Output Power (W)
20
• Performance at 960 MHz, 28 Volts
- Output Power = 12 Watts
- Efficiency = 60% Typ
- Power Gain = 18 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Surface Mountable
• Available in Tape and Reel
• 100% Lot Traceability
A-12¹₃⁰₄₅1_6399742
0
0
0.0
0.2
0.4
0.6
Input Power (Watts)
Package 20244
RF Specifications (100% Tested)
Characteristic
Common Source Power Gain
(V_DD = 28 V, P_OUT = 12 W, I_DQ = 160 mA, f = 960 MHz)
Power Output at 1 dB Compressed
(V_DD = 28 V, I_DQ = 160 mA, f = 960 MHz)
Drain Efficiency
(V_DD = 28 V, P_OUT = 12 W, I_DQ = 160 mA, f = 960 MHz)
Load Mismatch Tolerance
(V_DD = 28 V, P_OUT = 12 W, I_DQ = 160 mA, f = 960 MHz
—all phase angles at frequency of test)
All published data at T_CASE = 25°C unless otherwise indicated.
Symbol Min Typ
G_ps
16.5
18
P-1dB
12
15
h
55
60
Y
—
—
Max Units
—
dB
—
Watts
—
%
10:1
—
e
1