PTF10136 Datasheet, PDF (2/7 Pages) Ericsson – 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

PTF 10136
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 25 mA
Drain-Source Leakage Current V_DS = 28 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 75 mA
Forward Transconductance
V_DS = 10 V, I_D = 0.5 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
Typical Performance
Typical P_OUT, Gain & Efficiency (at P-1dB)
vs. Frequency
22
75
20
Gain (dB)
18
60
16
14
Efficiency (%) 45
12
10
V_DD = 28 V
I_DQ = 70 mA
30
Output Pow er (W)
8
15
6
4
0
840 860 880 900 920 940 960 980 100
Frequency (MHz)
0
e
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ
—
—
—
0.3
Max
—
1
5.0
—
Units
Volts
mA
Volts
Siemens
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
39
0.22
–40 to +150
4.5
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Broadband Test Fixture Performance
24
60
20
Gain (dB)
16
12
Efficiency (%)
50
V_DD = 28 V
I_DQ = 70 mA
40
P_OUT = 6 W
-8
Return Loss (dB) 30
-15
8
960
970
980
990
Frequency (MHz)
-203
1000
2