PTF10136 Datasheet, PDF (1/7 Pages) Ericsson – 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

PTF 10136
6 Watts, 1.0 GHz
GOLDMOS Field Effect Transistor
Description
The PTF 10136 is a 6–watt GOLDMOS FET intended for large signal
amplifier applications from to 1.0 GHz. It operates at 57% efficiency
with 19 dB typical gain. Nitride surface passivation and full gold
metallization ensure excellent device lifetime and reliability.
Typical Output Power & Efficiency vs. Input Power
10
70
Ef f iciency
8
56
6
42
4
V_DD = 28 V
I_DQ = 70 mA
2
f = 960 MHz
Output Pow er
0
0.00
0.05
0.10
Input Power (Watts)
28
14
0
0.15
• Performance at 960 MHz, 28 Volts
- Output Power = 6 Watts
- Efficiency = 57% Typ
- Power Gain = 19 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Surface Mountable
• Available in Tape and Reel
• 100% Lot Traceability
10136 _A-1234569935
Package 20244
RF Specifications (100% Tested)
Characteristic
Common Source Power Gain
(V_DD = 28 V, P_OUT = 1 W, I_DQ = 70 mA, f = 960 MHz)
Power Output at 1 dB Compressed
(V_DD = 28 V, I_DQ = 70 mA, f = 960 MHz)
Drain Efficiency
(V_DD = 28 V, P_OUT = 6 W, I_DQ = 70 mA, f = 960 MHz)
Load Mismatch Tolerance
(V_DD = 28 V, P_OUT = 6 W, I_DQ = 70 mA, f = 960 MHz—
all phase angles at frequency of test)
All published data at T_CASE = 25°C unless otherwise indicated.
Symbol
G_ps
P-1dB
h
Y
Min
18
6.0
50
—
Typ
19
7.5
57
—
Max Units
—
—
—
10:1
dB
Watts
%
—
e
1