PTF10133 Datasheet, PDF (2/6 Pages) Ericsson – 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

PTF 10133
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 25 mA
Drain-Source Leakage Current V_DS = 28 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 75 mA
Forward Transconductance
V_DS = 10 V, I_D = 3 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
Typical Performance
Typical P_OUT, Gain & Efficiency (at P-1dB)
vs. Frequency
18
120
17
110
16
Output Pow er (W) ₁₀₀
15
90
14
Gain
80
13
V_DD = 28 V
70
12
I_DQ = 1.0 A
60
11
50
Ef f iciency
10
40
860 865 870 875 880 885 890 895 900
Frequency (MHz)
e
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ Max Units
—
—
Volts
—
1.0
mA
—
5.0
Volts
3.0
—
Siemens
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
205
1.18
–40 to +150
0.85
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Broadband Test Fixture Performance
20
60
Efficiency (%)
50
16
Gain (dB)
40
12
V_DD = 28 V
30
I_DQ = 1.0 A
20
8
P_OUT = 85 W
Return Loss (dB) _-1100
4
-020
860 865 870 875 880 885 890 895 900
Frequency (MHz)
2