PTF10133 Datasheet, PDF (1/6 Pages) Ericsson – 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

PTF 10133
85 Watts, 860–960 MHz
GOLDMOS^™ Field Effect Transistor
Description
The PTF 10133 is an internally matched 85 watt LDMOS FET
intended for cellular, GSM and D-AMPS applications. This device
operates at 50% efficiency with 13.5 dB of gain. Full gold metallization
ensures excellent device lifetime and reliability.
Typical Output Power vs. Input Power
120
60
Ef f ic iency
100
50
80
40
60
V_DD = 28.0 V
30
I_DQ = 1.0 A
40
f = 894 MHz
20
20
0
0
Output Pow er
1
2
3
4
5
Input Power (Watts)
10
0
6
• INTERNALLY MATCHED
• Performance at 894 MHz, 28 Volts
- Output Power = 85 Watts
- Power Gain = 13.5 dB Typ
- Efficiency = 50% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Excellent Thermal Stability
• 100% Lot Traceability
A-12¹₃⁰₄₅1_6939347
Package 20248
RF Specifications (100% Tested)
Characteristic
Gain
(V_DD = 28 V, P_OUT = 85 W, I_DQ = 1.0 A, f = 894 MHz)
Power Output at 1 dB Compression
(V_DD = 28 V, I_DQ = 1.0 A, f = 894 MHz)
Drain Efficiency
(V_DD = 28 V, P_OUT = 85 W, I_DQ = 1.0 A, f = 894 MHz)
Load Mismatch Tolerance
(V_DD = 28 V, P_OUT = 85 W, I_DQ = 1.0 A, f = 894 MHz
—all phase angles at frequency of test)
All published data at T_CASE = 25°C unless otherwise indicated.
Symbol Min
G_ps
12.5
P-1dB
85
h
45
Y
—
Typ
13.5
90
50
—
Max Units
—
dB
—
Watts
—
%
10:1
—
e
1