PTF10122 Datasheet, PDF (2/6 Pages) Ericsson – 50 Watts WCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor

PTF 10122
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 100 mA
Zero Gate Voltage Drain Current V_DS = 28 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 150 mA
Forward Transconductance
V_DS = 10 V, I_D = 2 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
12
70
11 _{Gain (dB)}
10
Output Power (W) ⁶⁰
50
9
40
8
7
2000
V_DD = 28 V
I_DQ = 600 mA
30
Efficiency (%)
20
2100
2200
2300
Frequency (MHz)
e
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ Max Units
—
—
Volts
—
2.0
mA
—
5.0
Volts
4.0
—
Siemens
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
237
1.35
–40 to +150
0.74
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Broadband Test Fixture Performance
14
50
13
12
11 ^Gain
10
9
8
7
6
2100
Efficiency @ P-1dB
40
30
V_DD = 28 V
I_DQ = 600 mA
P_OUT = 15 W
200
-5
Return Loss ^-10
-1150
-20
-205
2125
2150
2175
2200
Frequency (MHz)
2