PTF10122 Datasheet, PDF (1/6 Pages) Ericsson – 50 Watts WCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor

PTF 10122
50 Watts WCDMA, 2.1–2.2 GHz
GOLDMOS^™ Field Effect Transistor
Description
The PTF 10122 is an internally matched common source N-channel
enhancement-mode lateral MOSFET intended for WCDMA applications
from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11 dB of
gain. Nitride surface passivation and full gold metallization ensure ex-
cellent device lifetime and reliability.
Typical Output Power vs. Input Power
60
50
50
40
30
20
10
0
0
40
30
V_DD = 28 V
20
I_DQ = 600 mA
10
f = 2.17 GHz
0
1
2
3
4
5
6
Input Power (Watts)
• INTERNALLY MATCHED
• Guaranteed Performance at 2.17 GHz, 28 V
- Output Power = 50 Watts Min
- Gain = 11.0 dB Typ
- Efficiency = 35% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% Lot Traceability
10122 _A-1234569946
Package 20248
RF Specifications (100% Tested)
Characteristic
Gain
(V_DD = 28 V, P_OUT = 15 W, I_DQ = 600 mA, f = 2.11 GHz)
Power Output at 1 dB Compression
(V_DD = 28 V, I_DQ = 600 mA, f = 2.17 GHz)
Drain Efficiency
(V_DD = 28 V, P_OUT = 50 W, I_DQ = 600 mA, f = 2.17 GHz)
Load Mismatch Tolerance
(V_DD = 28 V, P_OUT = 50 W, I_DQ = 600 mA, f = 2.17 GHz
—all phase angles at frequency of test)
All published data at T_CASE = 25°C unless otherwise indicated.
Symbol Min
G_ps
10.0
P-1dB
50
h_D
30
Y
—
Typ
11.0
—
35
—
Max Units
—
dB
—
Watts
—
%
10:1
—
e
1