PTF10119 Datasheet, PDF (2/4 Pages) Ericsson – 12 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor

PTF 10119
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 50 mA
Zero Gate Voltage Drain Current V_DS = 26 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 75 mA
Forward Transconductance
V_DS = 10 V, I_D = 2 A
e
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ
—
—
—
0.8
Max
—
1.0
5.0
—
Units
Volts
mA
Volts
Siemens
RF Specifications (100% Tested)
Characteristic
Gain
(V_DD = 28 V, P_OUT = 3 W, I_DQ = 160 mA, f = 2.11, 2.17 GHz)
Power Output at 1 dB Compressed
(V_DD = 28 V, I_DQ = 160 mA, f = 2.17 GHz)
Drain Efficiency
(V_DD = 28 V, P_OUT = 12 W, I_DQ = 160 mA, f = 2.17 GHz)
Load Mismatch Tolerance
(V_DD = 28 V, P_OUT = 12 W, I_DQ = 160 mA, f = 2.17 GHz
—all phase angles at frequency of test)
Symbol Min
G_ps
10
p-1dB
12
h_D
30
Y
—
Typ Max Units
11
—
dB
14
—
Watts
43
—
%
—
10:1
—
Impedance Data
V_DS = 28 V, P_OUT = 12 W, I_DQ = 160 mA
Z Source
Z₀ = 50 W
D
Z Load
Frequency
GHz
2.00
2.10
2.12
2.15
2.17
2.20
2.30
Z Source W
R
jX
5.7
-12.11
16.4
-19.50
19.7
-18.82
22.8
-14.14
23.0
-13.15
26.6
-9.28
20.2
12.03
G
S
Z Load W
R
jX
3.30
1.21
3.55
0.92
4.12
0.88
3.75
0.62
3.53
0.34
3.32
0.38
3.23
0.84
Z Load
2.00 GHz
2.30 GHz
2.30 GHz
0.1
0.2
Z Source
2.00 GHz
0.3
2