PTF10119 Datasheet, PDF (1/4 Pages) Ericsson – 12 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor

PTF 10119
12 Watts, 2.1–2.2 GHz
GOLDMOS^™ Field Effect Transistor
Description
The PTF 10119 is an internally matched, common source, N-channel
enhancement-mode lateral MOSFET intended for WCDMA
applications from 2.1 to 2.2 GHz. It is rated at 12 watts power output.
Nitride surface passivation and gold metallization ensure excellent
device reliability.
Typical Output Power vs. Input Power
20
16
12
8
V_DD = 28 V
4
I_DQ = 160 mA
f = 2170 MHz
0
0
0.2 0.4 0.6 0.8
1
1.2
Input Power (Watts)
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
• INTERNALLY MATCHED
• Performance at 2.17 GHz, 28 Volts
- Output Power = 12 Watts Min
- Power Gain = 11 dB Typ
- Efficiency = 43% Typ @ P-1dB
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% lot traceability
10119 _A-1234560053
Package 20222
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
55
0.31
–40 to +150
3.2
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
e
1