PTF10112 Datasheet, PDF (2/6 Pages) Ericsson – 60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor

PTF 10112
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 100 mA
Zero Gate Voltage Drain Current V_DS = 28 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 150 mA
Forward Transconductance
V_DS = 10 V, I_D = 2 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation at
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
14
80
Output Power (W)
13
70
12 ^{Gain (dB)}
60
11
50
10
9
1750
V_CC = 28 V
I_DQ = 580 mA
Efficiency (%)
1850
1950
Frequency (MHz)
40
30
2050
e
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ Max Units
—
—
Volts
—
5.0
mA
—
5.0
Volts
4.0
—
Siemens
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
237
1.35
–40 to +150
0.74
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Broadband Test Fixture Performance
13
60
Gain (dB)
12
11
10
9
1930 1940
50
V_DD = 28 V
I_DQ = 580mA
P_OUT = 20 W
40
Efficiency (%)
@P-1dB ₃₀
-120
-210
Return Loss (dB)
-300
1950 1960 1970 1980 1990
Frequency (MHz)
2