PTF10112 Datasheet, PDF (1/6 Pages) Ericsson – 60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor

PTF 10112
60 Watts, 1.8–2.0 GHz
GOLDMOS^™ Field Effect Transistor
Description
The PTF 10112 is an internally matched common source N-channel
enhancement-mode lateral MOSFET intended for CDMA and TDMA
applications from 1.8 to 2.0 GHz. It is rated at 60 watts power output.
Nitride surface passivation and full gold metallization ensure excellent
device lifetime and reliability.
Typical Output Power vs. Input Power
80
• INTERNALLY MATCHED
• Guaranteed Performance at 1.93, 1.99 GHz,
28 V
- Output Power = 60 Watts Min
- Power Gain = 12 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% Lot Traceability
60
40
20
0
0
V_CC = 28 V
I_DQ = 580 mA
f = 2000 MHz
1
2
3
4
5
6
Input Power (Watts)
A-1¹₂₃⁰₄₅1_6918237
Package 20248
RF Specifications (100% Tested)
Characteristic
Gain
(V_DD = 28 V, P_OUT = 15 W, I_DQ = 580 mA, f = 1.93, 1.99 GHz)
Power Output at 1 dB Compression
(V_DD = 28 V, I_DQ = 580 mA, f = 1.99 GHz)
Drain Efficiency
(V_DD = 28 V, P_OUT = 60 W, I_DQ = 580 mA, f = 1.99 GHz)
Load Mismatch Tolerance
(V_DD = 28 V, P_OUT = 60 W, I_DQ = 580 mA, f = 1.99 GHz
—all phase angles at frequency of test)
All published data at T_CASE = 25°C unless otherwise indicated.
Symbol
G_ps
P-1dB
h_D
Y
Min
11
60
—
—
Typ
12
—
41
—
Max Units
—
dB
—
Watts
—
%
10:1
—
e
1