PTF10107 Datasheet, PDF (2/6 Pages) Ericsson – 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor

PTF 10107
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 20 mA
Zero Gate Voltage Drain Current V_DS = 26 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 75 mA
Forward Transconductance
V_DS = 10 V, I_D = 2 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation at
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
Typical Performance
P_OUT, Gain & Efficiency (at P-1dB) vs. Frequency
15
65
13 Gain (dB)
55
11
9
V_DD = 26 V
I_DQ = 70 mA
7
Efficiency (%)
45
35
25
Output Pow er
5
15
1750 1800 1850 1900 1950 2000 2050
Frequency (MHz)
e
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ Max Units
—
—
Volts
—
1.0
mA
—
5.0
Volts
0.8
—
Siemens
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
39
0.22
–40 to +150
4.5
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Broadband Test Fixture Performance
14
60
Gain (dB)
12
50
Efficiency (%)
10
40
8
6
4
2
1925
V_CC = 26 V
I_DQ = 70 mA
P_OUT = 4 W
Return Loss (dB)
1950
1975
Frequency (MHz)
- ₃₀₅
-2105
-1205
-035
2000
2