PTF10107 Datasheet, PDF (1/6 Pages) Ericsson – 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor

PTF 10107
5 Watts, 2.0 GHz
GOLDMOS ^® Field Effect Transistor
Description
The PTF 10107 is a 5–watt GOLDMOS FET intended for large signal
applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with
11 dB gain. Nitride surface passivation and full gold metallization
ensure excellent device lifetime and reliability.
• Guaranteed Performance at 1.99 GHz, 26 V
- Output Power = 5 Watts Min
- Power Gain = 11 dB Min
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% Lot Traceability
Typical Output Power & Efficiency
vs. Input Power
8
100
7
Output Pow er
80
6
Ef f iciency
5
60
4
3
V_DD = 26 V
40
2
I_DQ = 70 mA
20
1
f = 2.0 GHz
0
0
0.0 0.1 0.2 0.3 0.4 0.5
Input Power (Watts)
RF Specifications (100% Tested)
Characteristic
Gain
(V_DD = 26 V, P_OUT = 1 W, I_DQ = 70 mA, f = 1.93, 1.99 GHz)
Power Output at 1 dB Compression
(V_DD = 26 V, I_DQ = 70 mA, f = 1.99 GHz)
Drain Efficiency
(V_DD = 26 V, P_OUT = 5 W, I_DQ = 70 mA, f = 1.99 GHz)
Load Mismatch Tolerance
(V_DD = 26 V, P_OUT = 5 W, I_DQ = 70 mA, f = 1.99 GHz
—all phase angles at frequency of test)
All published data at T_CASE = 25°C unless otherwise indicated.
10107 _A-1234569845
Package 20244
Symbol Min Typ Max Units
G_ps
11
—
P-1dB
5
6.5
—
dB
—
Watts
h_D
40
—
—
%
Y
—
—
10:1
—
e
1