PTF10065 Datasheet, PDF (2/6 Pages) Ericsson – 30 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor

PTF 10065
RF Specifications (cont.) (100% Tested)
Characteristic
Power Output at 1 dB Compressed
(V_DD = 28 V, I_DQ = 380 mA, f = 1.99 GHz)
Load Mismatch Tolerance
(V_DD = 28 V, P_OUT = 30 W, I_DQ = 380 mA,
f = 1.99 GHz—all phase angles at frequency of test)
Input Return Loss
(V_DD = 28 V, P_OUT = 3 W, I_DQ = 380 mA, f = 1.93, 1.99 GHz)
Insertion Phase (Referenced to Correlation Devices)
(V_DD = 28 V, P_OUT = 3 W, I_DQ = 380 mA, f = 1.96 GHz)
Symbol Min
P-1dB
30
Y
—
Rtn Loss 10
f
–10
Electrical Characteristics (cont.) (100% Tested) (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 25 mA
Zero Gate Voltage Drain Current V_DS = 28 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 75 mA
Forward Transconductance
V_DS = 10 V, I_D = 6 A
Gate-Source Leakage
V_GS = 10 V
Gate Quiescent Voltage
V_DS = 28 V, I_D = 380 mA
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
I_GSsf
V_GS(q)
Min
62
—
—
—
—
3.0
e
Typ Max Units
—
—
Watts
—
10:1
—
—
—
dB
—
+10
Deg.
Typ
—
—
3.8
1.8
—
—
Max
—
1.0
—
—
1
5.0
Units
Volts
mA
Volts
Siemens
mA
V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
62
±20
200
120
0.7
–40 to +150
1.4
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
2