PTF10065 Datasheet, PDF (1/6 Pages) Ericsson – 30 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor

PTF 10065
30 Watts, 1.93–1.99 GHz
GOLDMOS ^® Field Effect Transistor
Description
The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS
amplifier applications from 1.93 to 1.99 GHz. It typically operates with
11 dB gain. Nitride surface passivation and full gold metallization
ensure excellent device lifetime and reliability.
• INTERNALLY MATCHED
• Guaranteed Performance at 1.99 GHz, 28 V
- Output Power = 30 Watts Min
- Power Gain = 11.0 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Excellent Thermal Stability
• 100% Lot Traceability
Output Power and Efficiency vs. Input Power
40
80
Output Power
70
30
60
Efficiency ⁵⁰
20
40
V_DD = 28 V
30
10
I_DQ = 380 mA
20
f = 1.99 GHz
10
0
0
0
1
2
3
Input Power (Watts)
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123¹₄₅⁰₆₉⁰₉₂6_15A
Package 20237
RF Specifications (100% Tested)
Characteristic
Symbol Min
Gain
(V_DD = 28 V, P_OUT = 3 W, I_DQ = 380 mA, f = 1.93, 1.99 GHz)
G_ps
—
ACPR (40 Walsh Codes)
±885 KHz
(V_DD = 28 V, P_OUT = 3 W(CDMA), I_DQ = 380 mA, f = 1.99 GHz) ACPR
- 50
±1.98 MHz
(V_DD = 28 V, P_OUT = 3 W(CDMA), I_DQ = 380 mA, f = 1.99 GHz) ACPR
- 62
Gain Flatness
(V_DD = 28 V, P_OUT = 3 W, I_DQ = 380 mA, f = 1.930–1.990 GHz)
GDf
—
Drain Efficiency
(V_DD = 28 V, P_OUT = 3 W, I_DQ = 380 mA, f = 1.99 GHz)
h_D
9
All published data at T_CASE = 25°C unless otherwise indicated.
1
Typ Max Units
11.0
—
dB
—
—
dBc
—
—
dBc
—
0.7
dB
—
—
%
(table continues next page)
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