PTF10053 Datasheet, PDF (2/6 Pages) Ericsson – 12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor

PTF 10053
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 50 mA
Zero Gate Voltage Drain Current V_DS = 26 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 75 mA
Forward Transconductance
V_DS = 10 V, I_D = 2 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
Typical Performance
POUT, Gain & Efficiency (at P-1dB) vs. Frequency
16
55
Output Power (W)
15
50
14
Efficiency (%) 45
13
40
12
V_DD = 26 V
35
I_DQ = 155 mA
11
30
10 Gain (dB)
25
9
1750
1800
1850 1900 1950
Frequency (MHz)
2000
20
2050
e
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ Max Units
—
—
Volts
—
1.0
mA
—
5.0
Volts
0.8
—
Siemens
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
58
0.33
–40 to +150
3.0
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Broadband Test Fixture Performance
14
60
12 Gain (dB)
50
10
8
6
4
2
1925
40
V_DD = 26 V
I_DQ = 155 mA
Pout = 10 W
Efficiency (%)
300
-1200
Return Loss
1950
1975
Frequency (MHz)
-2100
-300
2000
2