PTF10053 Datasheet, PDF (1/6 Pages) Ericsson – 12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor

PTF 10053
12 Watts, 2.0 GHz
GOLDMOS ^® Field Effect Transistor
Description
The PTF 10053 is a 12–watt GOLDMOS FET intended for large
signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency
with 12 dB typical gain. Nitride surface passivation and full gold
metallization ensure excellent device lifetime and reliability.
• Guaranteed Performance at 1.99 GHz, 26 V
- Output Power = 12 Watts Min
- Power Gain = 12 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% Lot Traceability
Typical Output Power & Efficiency vs. Input Power
16
50
Efficiency
14
45
12
40
10
35
Output Power
8
30
6
25
V_DD = 26 V
4
20
I_DQ = 155 mA
2
f = 2.0 GHz
15
0
10
0.0
0.5
1.0
1.5
2.0
Input Power (Watts)
10053 _A-1234569911
Package 20244
RF Specifications (100% Tested)
Characteristic
Gain
(V_DD = 26 V, P_OUT = 3 W, I_DQ = 155 mA, f = 1.93, 1.99 GHz)
Power Output at 1 dB Compression
(V_DD = 26 V, I_DQ = 155 mA, f = 1.99 GHz)
Drain Efficiency
(V_DD = 26 V, P_OUT = 12 W, I_DQ = 155 mA, f = 1.99 GHz)
Load Mismatch Tolerance
(V_DD = 26 V, P_OUT = 12 W, I_DQ = 155 mA, f = 1.99 GHz
—all phase angles at frequency of test)
All published data at T_CASE = 25°C unless otherwise indicated.
Symbol Min
G_ps
10
P-1dB
12
h_D
40
Y
—
Typ
12
—
—
—
Max Units
—
dB
—
Watts
—
%
10:1
—
e
1