PTF10052 Datasheet, PDF (2/6 Pages) Ericsson – 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

PTF 10052
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 5 mA
Drain-Source Leakage Current V_DS = 28 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 75 mA
Forward Transconductance
V_DS = 10 V, I_D = 3 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
Typical Performance
P_OUT, Gain & Efficiency (at P-1dB) vs. Frequency
30
70
25
Efficiency (%) ₆₀
20
50
15 ^{Gain (dB)}
40
10
5
V_DD = 28 V
I_DQ = 300 mA
0
Output Pow er (W) ₃₀
20
400 500 600 700 800 900 1000
Frequency (MHz)
e
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ
70
—
—
2.8
Max
—
1.0
5.0
—
Units
Volts
mA
Volts
Siemens
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
60
±20
200
120
0.7
–40 to +150
1.4
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Broadband Test Fixture Performance
20
60
Efficiency (%)
16
50
Gain
12
8
4
925 930
V_DD = 28 V
40
I_DQ = 300 mA
- ³⁰⁵
P_OUT = 35 W
-2105
Return Loss (dB) 10
-25
0
935 940 945 950 955 960-35
Frequency (MHz)
2