PTF10052 Datasheet, PDF (1/6 Pages) Ericsson – 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

PTF 10052
35 Watts, 1.0 GHz
GOLDMOS^™ Field Effect Transistor
Description
The PTF 10052 is a 35 Watt LDMOS FET intended for large signal
amplifier applications to 1.0 GHz. It operates at 55% efficiency and
13.5 dB of gain. Nitride surface passivation and full gold metallization
ensure excellent device lifetime and reliability.
Typical Output Power & Efficiency
vs. Input Power
50
100
40
Output Pow er (W)
80
Ef ficiency (%)
30
60
20
10
0
0
V_DD = 28 V
40
I_DQ = 300 m A ₂₀
f = 960 MHz
0
1
2
3
Input Power (Watts)
• Performance at 960 MHz, 28 Volts
- Output Power = 35 Watts
- Power Gain = 13.5 dB Typ
- Efficiency = 55% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• 100% Lot Traceability
• Available in Package 20222 as PTF 10007
Package
20235
B-12¹₃⁰₄₅0_6959216
10007 _A-1234569725
Package
20222
RF Specifications (100% Tested)
Characteristic
Gain
(V_DD = 28 V, P_OUT = 35 W, I_DQ = 300 mA, f = 960 MHz)
Power Output at 1 dB Compression
(V_DD = 28 V, I_DQ = 300 mA, f = 960 MHz)
Drain Efficiency
(V_DD = 28 V, P_OUT = 35 W, I_DQ = 300 mA, f = 960 MHz)
Load Mismatch Tolerance
(V_DD = 28 V, P_OUT = 35 W, I_DQ = 300 mA, f = 960 MHz—
all phase angles at frequency of test)
All published data at T_CASE = 25°C unless otherwise indicated.
Symbol Min
G_ps
P-1dB
h
Y
12.0
35
50
—
Typ
13.5
—
55
—
Max Units
—
dB
—
Watts
—
%
10:1
—
e
1