PTF10048 Datasheet, PDF (2/6 Pages) Ericsson – 30 Watts, 2.1-2.2 GHz, W-CDMA GOLDMOS Field Effect Transistor

PTF 10048
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 50 mA
Zero Gate Voltage Drain Current V_DS = 28 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 75 mA
Forward Transconductance
V_DS = 10 V, I_D = 6 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
Typical Performance
Typical P_OUT, Gain & Efficiency (at P-1dB)
vs. Frequency
12
50
Gain (dB)
11
45
10
9 ^VDD ^{= 28 V}
I_DQ = 425 mA
8
2000 2050 2100
Efficiency (%)
Output Pow er (W)
2150 2200 2250
40
35
30
25
2300
Frequency (MHz)
e
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ Max Units
65
—
Volts
—
1.0
mA
—
5.0
Volts
1.8
— Siemens
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
120
0.66
–40 to +150
1.5
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Broadband Test Fixture Performance
14
45
Efficiency (%)
12 _{Gain (dB)}
35
10
V_DD = 28 V
8
I_DQ = 425 mA
205
P_OUT = 10 W
-5
6
-10
-1155
4
Return Loss _-20
2
2100
2125
2150
2175
-525
-30
2200
Frequency (MHz)
2