PTF10048 Datasheet, PDF (1/6 Pages) Ericsson – 30 Watts, 2.1-2.2 GHz, W-CDMA GOLDMOS Field Effect Transistor

PTF 10048
30 Watts, 2.1–2.2 GHz, W-CDMA
GOLDMOS^® Field Effect Transistor
Description
The PTF 10048 is an internally matched 30–watt GOLDMOS FET
intended for WCDMA applications from 2.1 to 2.2 GHz. It operates at
40% efficiency with 10.5 dB typical gain. Nitride surface passivation
and full gold metallization ensure excellent device lifetime and
reliability.
• INTERNALLY MATCHED
• Guaranteed Performance at 2.17 GHz, 28 V
- Output Power = 30 Watts Min
- Gain = 10.5 dB Typ at 30 Watts
• Full Gold Metallization
• Silicon Nitride Passivated
• Excellent Thermal Stability
• 100% Lot Traceability
Typical Output Power & Efficiency vs. Input Power
40
45
Ef f ic ienc y
30
35
20
10
0
0
Output Pow er
V_DD = 28 V
25
I_DQ = 425 mA
f = 2170 MHz ₁₅
5
1
2
3
4
Input Power (Watts)
10048 _A-1234569940
Package 20237
RF Specifications (100% Tested)
Characteristic
Symbol
Gain
(V_DD = 28 V, P_OUT = 10 W, I_DQ = 425 mA, f = 2.11 & 2.17 GHz)
Power Output at 1 dB Compression
(V_DD = 28 V, I_DQ = 425 mA, f = 2.17 GHz)
Drain Efficiency
(V_DD = 28 V, P_OUT = 30 W, I_DQ = 425 mA, f = 2.17 GHz)
Load Mismatch Tolerance
(V_DD = 28 V, P_OUT = 30 W, I_DQ = 425 mA, f = 2.17 GHz
—all phase angles at frequency of test)
G_ps
P-1dB
h
Y
All published data at T_CASE = 25°C unless otherwise indicated.
Min
10
30
30
—
Typ
11
36
40
—
Max Units
—
dB
—
Watts
—
%
10:1
—
e
1