PTF10043 Datasheet, PDF (2/6 Pages) Ericsson – 12 Watts, 1.9-2.0 GHz GOLDMOS Field Effect Transistor

PTF 10043
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 5 mA
Zero Gate Voltage Drain Current V_DS = 26 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 75 mA
Forward Transconductance
V_DS = 10 V, I_D = 2 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
Typical Performance
P_OUT, Gain & Efficiency (at P-1dB) vs. Frequency
16
15
Gain
14
60
Ef f ic ienc y
50
40
13
V_DD = 26 V
I_DQ = 150 mA
12
30
Output Pow er (W) ₂₀
11
1750
1800
1850 1900 1950
Frequency (MHz)
2000
10
2050
e
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ
—
—
—
0.8
Max
—
1.0
5.0
—
Units
Volts
mA
Volts
Siemens
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
55
0.31
–40 to +150
3.2
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Broadband Test Fixture Performance
14
60
12 Gain
10
50
Efficiency (%)
40
8
V_CC = 26 V
- ₃₅₀
I_DQ = 150 mA
6
P_OUT = 10 W ^-1250
4
2
1900
1925
1950
-2150
Return Loss
0
1975
200-035
Frequency (MHz)
2