PTF10043 Datasheet, PDF (1/6 Pages) Ericsson – 12 Watts, 1.9-2.0 GHz GOLDMOS Field Effect Transistor

PTF 10043
12 Watts, 1.9–2.0 GHz
GOLDMOS ^® Field Effect Transistor
Description
The PTF 10043 is an internally matched GOLDMOS FET intended
for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at
12 watts, it operates at 45% efficiency with 12 dB gain. Nitride sur-
face passivation and full gold metallization ensure excellent device
lifetime and reliability.
Typical Output Power vs. Input Power
20
16
12
8
4
0
0.0
V_DD = 26 V
I_DQ = 150 mA
f = 2.0 GHz
0.2
0.4
0.6
0.8
1.0
Input Power (Watts)
• INTERNALLY MATCHED
• Performance at 2.0 GHz, 26 Volts
- Output Power = 12 Watts Min
- Power Gain = 12 dB Typ at 3 Watts
- Efficiency = 45% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% Lot Traceability
1 _{0 0 4 3 A-1234569834}
Package 20222
RF Specifications (100% Tested)
Characteristic
Gain
(V_DD = 26 V, P_OUT = 3 W, I_DQ = 150 mA, f = 1.93, 2.0 GHz)
Power Output at 1 dB Compressed
(V_DD = 26 V, P_OUT = 12 W, I_DQ = 150 mA, f = 2.0 GHz)
Drain Efficiency
(V_DD = 26 V, P_OUT = 12 W, I_DQ = 150 mA, f = 2.0 GHz)
Load Mismatch Tolerance
(V_DD = 26 V, P_OUT = 12 W, I_DQ = 150 mA, f = 2.0 GHz
—all phase angles at frequency of test)
All published data at T_CASE = 25°C unless otherwise indicated.
Symbol Min
G_ps
11
p-1dB
12
h_D
40
Y
—
1
Typ Max Units
12
—
dB
14
—
Watts
45
—
%
—
10:1
—
e